aug. 1999 pin configuration mitsubishi semiconductor m54580p/fp 7-unit 150ma source type darlington transistor array description m54580p and m54580fp are seven-circuit output-sourcing darlington transistor arrays. the circuits are made of pnp and npn transistors. both the semiconductor integrated cir- cuits perform high-current driving with extremely low input- current supply. features high breakdown voltage (bv ceo 3 50v) high-current driving (io(max) = C150ma) active l-level input with input diodes wide operating temperature range (ta = C20 to +75 c) application drives of relays, printers and indication elements such as leds, fluorescent display tubes and lamps, and interfaces between mos-bipolar logic systems and relays, solenoids, or small motors function the m54580p and m54580fp each have seven circuits, which are made of output current-sourcing darlington tran- sistors consisting of pnp and npn transistors. each pnp transistor has a diode and resistance of 7k w between the base and input pin. its emitter and npn transistor collectors are connected to the v s pin (pin 9). resistance of 50k w is connected between each output pin and gnd pin (pin 8). output current is 150ma maximum. supply voltage v s is 50v maximum. the m54580fp is enclosed in a molded small flat package, enabling space-saving design. circuit diagram absolute maximum ratings (unless otherwise noted, ta = C20 ~ +75 c) v ceo v s v i i o p d t opr t stg C0.5 ~ +50 50 C0.5 ~ v s C150 1.47(p)/1.00(fp) C20 ~ +75 C55 ~ +125 v v v ma w c c ratings unit symbol parameter conditions collector-emitter voltage supply voltage input voltage output current power dissipation operating temperature storage temperature output, l current per circuit output, h ta = 25 c, when mounted on board 1 in1 ? in2 ? in3 ? in4 ? in5 ? in6 ? in7 ? v s gnd 2 3 4 5 6 7 8 16 15 14 13 12 11 10 9 ? o7 ? o6 ? o5 ? o4 ? o3 ? o2 ? o1 ? ? ? ? ? ? y ? ? ? ? ? ? t ? ? ? ? ? ? ? ? ? ? ? ? ? 16p4(p) package type 16p2n-a(fp) input output 30k 50k 7k 7k gnd v s input output the diode, indicated with the dotted line, is parasitic, and cannot be used. unit : w the seven circuits share the v s and gnd.
aug. 1999 timing diagram note 1 test circuit v (br) ceo i r h fe mitsubishi semiconductor m54580p/fp 7-unit 150ma source type darlington transistor array recommended operating conditions (unless otherwise noted, ta = C20 ~ +75 c) 50 v s v s C3.2 4 v s C0.4 0 i o v m a symbol unit parameter test conditions limits min typ + max v v v 50 800 0.9 0.8 C0.3 C0.65 3000 1.5 1.2 C0.6 C0.95 100 0 0 C100 C50 ma v ma + : the typical values are those measured under ambient temperature (ta) of 25 c. there is no guarantee that these values are obtained under any conditions. ns ns t on t off 200 7500 symbol unit parameter test conditions limits min typ max v s v ih v il parameter limits symbol unit min typ max duty cycle p : no more than 85% fp : no more than 50% duty cycle p : no more than 100% fp : no more than 100% h input voltage l input voltage supply voltage output current (current per 1 cir- cuit when 7 circuits are coming on si- multaneously) electrical characteristics (unless otherwise noted, ta = C20 ~ +75 c) i ceo = 100 m a v i = v s C3.2v, i o = C100ma v i = v s C3.2v, i o = C50ma v i = v s C3.5v v i = v s C6v v i = 40v v ce = 4v, v s = 10v, i c = C100ma, ta = 25 c collector-emitter breakdown voltage clamping diode reverse current dc amplification factor v ce (sat) i i collector-emitter saturation voltage input current switching characteristics (unless otherwise noted, ta = 25 c) c l = 15pf (note 1) turn-on time turn-off time pg 50 w c l r l v s input output (1) pulse generator (pg) characteristics : prr = 1khz, tw = 10 m s, tr = 6ns, tf = 6ns, z o = 50 w v i = 0.8 to 4v (2) input-output conditions : r l = 40 w , , v s = 4v (3) electrostatic capacity c l includes floating capacitance at connections and input capacitance at probes measured device ton 50% 50% 50% 50% toff input output
aug. 1999 mitsubishi semiconductor m54580p/fp 7-unit 150ma source type darlington transistor array typical characteristics ?he output current values represent the current per circuit. ?epeated frequency 3 10hz ?he value in the circle represents the value of the simultaneously-operated circuit. ?a = 25? ?he output current values represent the current per circuit. ?epeated frequency 3 10hz ?he value in the circle represents the value of the simultaneously-operated circuit. ?a = 75? ?he output current values represent the current per circuit. ?epeated frequency 3 10hz ?he value in the circle represents the value of the simultaneously-operated circuit. ?a = 25? ?he output current values represent the current per circuit. ?epeated frequency 3 10hz ?he value in the circle represents the value of the simultaneously-operated circuit. ?a = 75?
duty-cycle-output current characteristics (m54580p) duty cycle (%) output current i o (ma) 0 0 20 40 60 80 100 ? ? ? duty cycle (%) to a ? ? ? ? to a ? output current i o (ma) duty-cycle-output current characteristics (m54580p) 0 ?0 ?0 ?20 ?60 ?00 ? to ? ? ?0 ?0 ?20 ?60 ?00 ?0 ?0 ?20 ?60 ?00 0 20 40 60 80 100 ? ? ? duty cycle (%) to ? a output current i o (ma) duty-cycle-output current characteristics (m54580fp) 0 0 20 40 60 80 100 duty-cycle-output current characteristics (m54580fp) duty cycle (%) output current i o (ma) 0 0 20 40 60 80 100 thermal derating factor characteristics ambient temperature ta (?) m54580fp m54580p power dissipation pd (w) 0 0 0.5 1.0 1.5 2.0 25 50 75 100 output saturation voltage output current characteristics output saturation voltage v ce (sat) (v) 0 ?00 ?0 ?50 ?00 0 0.5 1.0 1.5 2.0 output current i o (ma) v s = 10v v i = 6.8v ta = 75? ta = ?0? ta = 25? ?0 ?0 ?20 ?60 ?00
aug. 1999 mitsubishi semiconductor m54580p/fp 7-unit 150ma source type darlington transistor array dc amplification factor output current characteristics output current i o (ma) 10 1 10 3 v s = 10v v ce = 4v ta = 25? ta = 75? ta = ?0? 5 3 2 7 5 3 2 7 10 4 10 3 10 2 23 57 23 57 10 2 dc amplification factor h fe grounded emitter transfer characteristics supply voltage-input voltage v s ? i (v) supply voltage-input voltage v s ? i (v) 0 ?00 ?0 ?50 ?00 0 1.0 2.0 3.0 4.0 output current i o (ma) v s = 10v v ce = 4v ta = 75? ta = ?0? ta = 25? input characteristics 0 ? 0 5 101520 input current i i (ma) v s = 20v ta = 75? ta = ?0? ta = 25? ? ? ? ?
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